產品中心

首頁 > 產品中心

HT75XXM-24V

特點
● 低功耗
● 輸入輸出電壓差低
● 溫度漂移系數小
● 最高工作電壓可達24V
● 靜態電流1.5μA
● 輸出電壓精度:±3%

應用
● 各類電源設備
● 通信設備
● 音頻、視頻設備


HT75XXH-40V

General Description
The HT75XXH series is a set of three-terminal low
power high voltage regulators implemented in
CMOS technology. They allow input voltages as
high as 40V. They are available with several fixed
output voltages ranging from 1.8V to 5.0V. CMOS
technology ensures low voltage drop and low
quiescent current. Although designed primarily as
fixed voltage regulators, these devices can be
used with external components to obtain variable
voltages and currents.

Features
● Quiescent Current: 4.2uA@12V
● PSRR:60dB@100Hz
● Voltage drop:600mV@100mA
● ESD HBM:8KV
●??High input voltage (up to 40V)
● Output voltage accuracy: tolerance ±2%
● Output current:100mA(Typ.)
● TO92 and SOT89 package
Applications
● Battery-powered equipment
● Communication equipment
● Audio/Video equipment

HT75XXH-25V

概述
HT75XXH系列是采用CMOS工藝制造,低功耗的高壓穩壓器,最高輸入電壓可達25V,輸出電壓范圍為1.5V~12.0V。它具有高精度的輸出電壓、極低的供電電流、極低的跌落電壓等特點。
特點
● 低功耗:≤3μA
● 低跌落電壓:典型值0.1V
● 低溫漂:典型值50 ppm/℃
● 高的輸入電壓:最高可達25V
● 高精度的輸出電壓:容差為+3%
● 封裝形式:SOT89-3、SOT23-3 、TO-92

應用
● 電池等電源的供電設備
● 各種通信設備
● 音頻/視頻設備?
● 安防監控設備

HT75XX-30V

概述
HT75XX是一款采用CMOS技術的低壓差線性穩壓器。最高工作電壓可達30V,有幾種固定輸出電壓值,輸出范圍為2.8V~9.0V,具有較低的靜態功耗,廣泛用于各類音頻、視頻設備和通信等設備的供電。

特點
●低功耗
●輸入輸出電壓差低
●溫度漂移系數小
●最高工作電壓可達30V
●靜態電流1.5μA
●輸出電壓精度:±2%

應用
●各類電源設備
●通信設備
●音頻、視頻設備

HT75XX-18V

概述
HT75XX系列是采用CMOS工藝制造,低功耗的高壓穩壓器,最高輸入電壓可達18V,輸出電壓范圍為2.0V~5.0V。它具有高精度的輸出電壓、極低的供電電流、極低的跌落電壓等特點。

特點
● 低功耗:≤3μA
● 低跌落電壓:典型值0.1V
● 低溫漂:典型值50 ppm/℃
● 高的輸入電壓:最高可達18V
● 高精度的輸出電壓:容差為+3%
● 封裝形式:TO-92、SOT89-3、SOT23-3

應用
● 電池等電源的供電設備 
● 各種通信設備
● 音頻/視頻設備 
 安防監控設備

HT73XX-20V

概述
HT73XX是一款采用CMOS技術的低壓差線性穩壓器。最高工作電壓可達20V,有幾種固定輸出電壓值,輸出范圍為2.1V~9.0V,具有較低的靜態功耗,廣泛用于各類音頻、視頻設備和通信等設備的供電。

特點
● 低功耗
●輸入輸出電壓差低
●溫度漂移系數小
●最高工作電壓可達20V
●靜態電流1.5μA
●輸出電壓精度:±2%
●輸出電流:300mA

應用
●各類電源設備
●通信設備
●音頻、視頻設備

HT73XX-18V

General Description
The HT73XX series is a set of three-terminal low
power high voltage regulators implemented in CMOS technology. They allow input voltages as
high as 15V. The series features extremely low quiescent current which is typically 2μA. They are available with several fixed output voltages
ranging from 1.5V to 5.0V. CMOS technology ensures low voltage drop and low quiescent current. Although designed primarily as fixed voltage regulators, these devices can be used with external components to obtain variable voltages
and currents.

Features
●Low power consumption
●Low voltage drop
●Low temperature coefficient
● Ultra low quiescent current: 2μA(typ.)
●High input voltage (up to 15V)
● Maximum output current: 250mA
●Output voltage accuracy: tolerance ±2%
● TO92, SOT89 ,SOT23-3 and SOT23 package

Applications
●Battery-powered equipment
● Communication equipment
●Audio/Video equipment

HT73XX-12V

概述
HT73XX系列是一款實用CMOS技術開發的低壓差、高精度輸出電壓、超低功耗電流的正電壓型電壓穩壓電路。由于內置有低通態電阻晶體管,因而如數輸出壓差低,同事具有高輸入電壓承受能力,最高工作電壓可達12V,適合需要較高耐壓的應用電路。

特點
● 輸出電壓精度高:精度±3%
● 超低功耗電流:典型值3uA
● 低輸出電壓溫漂:典型值50 ppm/℃
● 高輸入耐壓:升至12V保持輸出穩壓
● 封裝形式:TO-92、SOT89-3、SOT23-3

應用
● 使用電池供電設備的穩壓電源
● 家電玩具的穩壓電源
● 便攜式醫用儀器穩壓電源
● 通信設備的穩壓電源
● 移動電話用的穩壓電源

HT71XXH-24V

概述
HT71XXH系列是采用CMOS工藝制造,低功耗的高壓穩壓器,最高輸入電壓可達25V,輸出電壓范圍為1.5V~12.0V。它具有高精度的輸出電壓、極低的供電電流、極低的跌落電壓等特點。

特點
● 低功耗:≤3μA
● 低跌落電壓:典型值0.1V
● 低溫漂:典型值50 ppm/℃
● 高的輸入電壓:最高可達25V
● 高精度的輸出電壓:容差為+3%
● 封裝形式:SOT89-3、SOT23-3 、TO-92

應用
● 電池等電源的供電設備 
● 各種通信設備
● 音頻/視頻設備 
● 安防監控設備

PT6006

概述
PT6006是一款脈寬調制降壓型電源管理集成電路,其自身具有恒流恒壓輸出功能,并采用非同步整流降壓技術,轉換效率最高可達90%。
PT6006內置了線損補償功能并且提供固定電壓輸出,同時因為具有可調節的過流保護功能,故其可應用在DC-DC 降壓型電源管理應用中。
PT6006內部集成多種保護功能,例如:VDD 過壓保護、VDD 欠壓鎖定、過溫保護、過流保護和短路保護功能,其封裝采用SOP-8,封裝體積小,外圍器件少,適用于小體積的電源應用方案。

特點
● 輸入電壓范圍: 8V-36V
● 固定工作頻率: 150KHZ
● 固定輸出電壓:5V
● 最大輸出電流: 3.1A
●輸出電壓精度: ? 3%
● 輸出電流精度: ? 5%
● 內置可調節線損補償功能
●內置輸出過壓保護功能
● 內置輸入欠壓保護功能
● 內置軟啟動功能
● 內置過溫保護功能
● 內置過流保護功能
●內置輸出短路保護功能
● 采用SOP-8 封裝

應用
● 車載充電器
● DC-DC 電源

PT6221

GENERAL DESCRIPTION
The PT6221 is a constant frequency,
6-pin SOT23 current mode step-up converter intended for small, low power
applications. The PT6221 switches at
1MHz and allows the use of tiny, low cost
capacitors and inductors 2mm or less in height. Internal soft-start results in small inrush current and extends battery life.
The PT6221 features automatic shifting
to pulse frequency modulation mode at
light loads. The PT6221 includes
under-voltage lockout, current limiting,
and thermal overload protection to prevent damage in the event of an output overload. The PT6221 is available in a
small 6-pin SOT-23 package.

FEATURES
● Integrated 80mΩ Power MOSFET
● 2V to 24V Input Voltage
● 1MHz Fixed Switching Frequency
● Internal 4A Switch Current Limit
● Adjustable Output Voltage
● Internal Compensation
● Up to 28V Output Voltage
●Automatic Pulse Frequency Modulation
● Mode at Light Loads
● up to 97% Efficiency
● Available in a 6-Pin SOT23-6 Package

APPLICATIONS
●Battery-Powered Equipment
●Set-Top Boxes
●White LED Driver
●DSL and Cable Modems and Routers
●Networking cards powered from PCI or PCI express slots

PT3306

概述
PT3306是一款高效率、低功耗、低紋波、高工作頻率的PFM 同步升壓DC/DC 變換器。僅需要三個外圍元件,就可將低輸入電壓升壓到所需的工作電壓,可通過內部修調電路(步進0.1V)來獲得所需的輸出電壓,內置的同步開關管可使效率最高可達95%,工作于PFM 模式,可有效降低輕載模式下的紋波,具有極低的靜態電流特別適合于手持電子設備應用,采用SOT23 封裝。

特性
■最高效率:95%
■最高工作頻率:300KHZ
■低靜態電流:15uA
■輸出電壓可選:2.5V~3.6V
■輸出精度:正負2.5%
■寬輸入電壓范圍:0.9V~3.6V
■低紋波,低噪音

應用領域:
1~2個干電池的電子設備。
電子詞典、數碼相機、LED手電筒、LED燈、血壓計、MP3、遙控玩具、無線耳機、無線鼠標鍵盤、醫療器械、防丟器、汽車防盜器、充電器、VCR、PDA等手持電子設備。

PT8822

VDS= 20V
RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Ideal for Li ion battery

PT2010E

N-Channel Enhancement Mode Power MOSFET
Description
The PT2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●PWM application
●Load switch

PTY8726

Features
? Low On-Resistance
? Fast Switching
? 100% Avalanche Tested
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free, RoHS Compliant
Description
PTY8726 designed by the trench process
techniques to achieve extremely low on-resistance.
Additional features of this design can operate at
high junction temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Motor
applications and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.

PTU06N02

Features
? Very Low RDS(on) @ 2.5V Logic.
? V Logic Level Control
? TO-251 Package
? Pb?Free, RoHS Compliant
Applications
? Low Side Load Switch
? Battery Switch
? Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others

PTI03N02

Features
? Very Low RDS(on) @ 2.5V Logic.
? 3.3V Logic Level Control
? TO-262 Package
? Pb?Free, RoHS Compliant
Applications
? Low Side Load Switch
? Battery Switch
? Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
BVDSS 20 V
ID 120 A
RDSON@VGS=4.5V 2.6 mΩ
RDSON@VGS=2.5V 3.8 mΩ

SI2307

-30V P-Channel Enhancemen t M o d e M O S F E T
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

XP152A12COMR

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A<130mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A<190mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

XP151A13COMR

20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@3.6A<85mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A<115mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

XP151A13AOMR

FDN335N

20V N-Channel Enhancemen t ModeMOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

FDN306P

-12V P-Channel Enhancemen t ModeMOSFET
Features
? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
RDS(ON) = 80 mΩ @ VGS = –1.8 V
? Fast switching speed
Applications
? Battery management
? Load switch
? Battery protection

BSS84

-50V P-Channel Enhancement Mode MOSFET
VDS= -50V
RDS(ON), Vgs@-10V, Ids@-0.1A<8Ω
RDS(ON), Vgs@-5, Ids@-0.1A <10Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

2SC3356(4G)

TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

2SC3356

TRANSISTOR(NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

PTS9926B

Features
? BVDSS>20V, RDS(ON)=11mΩ(Typ)@VGS=10V
? Low On-Resistance
? Fast Switching
    encapsulation:SOP-8
? Lead-Free,Hg-Free, Green Product
PTS9926B designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.

PTS2017

20V/17A N-Channel Advanced Power MOSFET
Features
? Very Low RDS(on) @ 3.3V Logic.
? 3.3V Logic Level Control
? SOP8 Package
? Pb?Free, RoHS Compliant
Applications
? Low Side Load Switch
? Battery Switch
? Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others

PT4953B

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -2 0V
RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
Features
High power and current handing capability
Lead free product is acq uired

PTMPD0203

FEATURE
·lndependent Pinout to Each Device to
Each Device to Ease Circuit Design
·High Current Schottky Diode
·Featuring a MOSFET and a
·Schottky Barrier Diode

APPLICATION
·Optinized for Portable Applications Like Cell Phones
Digital Cameras,Media Players,etc
·DC-DC Buck Circuits
·Li-ion Battery Applications
·Color Display and Camera Flash Regulators

PT89S003F


工作電壓:2.4V-5.5V
工作溫度:-40~85°C
封裝:PT89S003FQ20R(QFN20)    PT89S003FX20U(TSSOP20)
內核:高速1T 8051
FIash ROM:16 Kbytes Flash ROM(MOVC禁止尋址0000H~00FFH)可重復寫入1萬次
IAP:可code option 成0K、0.5K、1K、或16K
EEPROM:獨立的128bytes,可重復寫入10萬次,10年以上保存壽命
SRAM:內部256bytes+外部256bytes
系統時鐘(fsys):內建高頻16MHz振蕩器(FHRC)
作為系統時鐘源時,fsys可通過編程器選擇設定為16/8/4/1.33MHz
頻率誤差:跨越(2.9V~5.5V)及(-20~85°C)應用環境,不超過±1%
內置高頻晶體振蕩器電路
可外接2~16MHz振蕩器
作為系統時鐘源時,fsys可通過編程器選擇使用外接晶振/1/2/4/12這四種分頻中的一種
IC系統時鐘(fsys)對應的工作電壓范圍:
>12MHz@2.9~5.5V
≤12MHz@2.4~5.5V

PTN4559

封裝形式:PDFN5X6
類型:N+P
ESD Diode:否/否
VDS (V):60/-60
VGS (V):±20/±20
VTH (V)Typ:1.9/-2.5
ID* (A) 25°C:6/-5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:60/75
RDS(ON) (mΩ max) at VGS= 4.5V:80/95
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTS4559

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):60/-60
VGS (V):±20/±20
VTH (V)Typ:1.9/-2.5
ID* (A) 25°C:6/-5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:60/75
RDS(ON) (mΩ max) at VGS= 4.5V:80/95
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTS4614

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):40/-40
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:7/-6
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:-
RDS(ON) (mΩ max) at VGS= 4.5V:20/35
RDS(ON) (mΩ max) at VGS= 2.5V:30/45
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTS4616

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:8/-7
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:20/28
RDS(ON) (mΩ max) at VGS= 4.5V:25/40
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTF640

封裝形式:TO-220F
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:18
PD* (W) 25°C:36
RDS(ON) (mΩ max) at VGS= 10V:0.18
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:HID SMPS

PTP640

封裝形式:TO-220
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:18
PD* (W) 25°C:90
RDS(ON) (mΩ max) at VGS= 10V:0.18
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:HID SMPS

PTS4503

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±12/±16
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:6.5/-5.5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:26/28
RDS(ON) (mΩ max) at VGS= 4.5V:35/45
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:無線充電、移動電源

PTF630

封裝形式:TO-220F
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:36
RDS(ON) (mΩ max) at VGS= 10V:0.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:HID SMPS

PTP630

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:90
RDS(ON) (mΩ max) at VGS= 10V:0.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: HID SMPS
?

服務熱線

0755-83268058

掃描二維碼 關注微信

欧美日韩国产精品草一区最新章节-亚洲欧美日韩中文一区国产-国产福利一区二区-国产亚洲精品线在线观看